MOSFET - Shenzhen Wendefu Technology Co., Ltd

Pd - Power Dissipation：

Vds - Drain-Source Breakdown Voltage：

Id - Continuous Drain Current：

Rds On - Drain-Source Resistance：

Qg - Gate Charge：

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2 Records

Image	Part	Manufacturer	Description	Price		Stock	Action
	IPB65R041CFD7ATMA1	Infineon Technologies	MOSFET HIGH POWE...	1+ $10.7640 10+ $9.7380 1000+ $9.7380	PDF RFQ	598 In-stock	Buy Now Get Quote
	IPB65R090CFD7ATMA1	Infineon Technologies	MOSFET HIGH POWE...	1+ $6.3450 10+ $5.7060 1000+ $5.7060	PDF RFQ	811 In-stock	Buy Now Get Quote

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