MOSFET - Shenzhen Wendefu Technology Co., Ltd

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Maximum Operating Temperature：

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Pd - Power Dissipation：

Vds - Drain-Source Breakdown Voltage：

Id - Continuous Drain Current：

Vgs th - Gate-Source Threshold Voltage：

Qg - Gate Charge：

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4 Records

Image	Part	Manufacturer	Description	Price		Stock	Action
	ISZ0901NLSATMA1	Infineon Technologies	MOSFET TRENCH <= 4...	1+ $0.7560 10+ $0.6660 100+ $0.5103 500+ $0.4041 5000+ $0.4041	PDF RFQ	8,147 In-stock	Buy Now Get Quote
	TPH6R004PL,LQ	Toshiba	MOSFET N-Ch 40V 2100p...	1+ $0.6750 10+ $0.5985 100+ $0.4590 500+ $0.3627 3000+ $0.2619	PDF RFQ	4,835 In-stock	Buy Now Get Quote
	IPD060N03LGATMA1	Infineon Technologies	MOSFET N-Ch 30V 50A ...	1+ $1.0080 10+ $0.8865 100+ $0.6804 500+ $0.5382 1000+ $0.4482	PDF RFQ	59 In-stock	Buy Now Get Quote
	HAT2168H-EL-E	Renesas Electronics	MOSFET MOSFET - 30...	$4.7646	PDF RFQ	2,006 In-stock	Buy Now Get Quote

ISZ0901NLSATMA1

ISZ0901NLSATMA1

Infineon Technologies

MOSFET TRENCH <= 40V

Stock : 8,147

1+: $0.7560

10+: $0.6660

100+: $0.5103

500+: $0.4041

5000+: $0.4041

Buy RFQ

TPH6R004PL,LQ

MOSFET N-Ch 40V 2100pF 30nC 87A 81W

Stock : 4,835

1+: $0.6750

10+: $0.5985

100+: $0.4590

500+: $0.3627

3000+: $0.2619

Buy RFQ

IPD060N03LGATMA1

IPD060N03LGATMA1

Infineon Technologies

MOSFET N-Ch 30V 50A DPAK-2

Stock : 59

1+: $1.0080

10+: $0.8865

100+: $0.6804

500+: $0.5382

1000+: $0.4482

Buy RFQ

HAT2168H-EL-E

Renesas Electronics

MOSFET MOSFET - 30V LFPAK - Lead Free

Stock : 2,006

: $4.7646

Buy RFQ

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