- Manufacturer:
-
- Toshiba (1)
- GaN Systems (1)
- Package / Case:
-
- Maximum Operating Temperature:
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- Technology:
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- Pd - Power Dissipation:
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- Vgs - Gate-Source Voltage:
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- Transistor Polarity:
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- Id - Continuous Drain Current:
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- Rds On - Drain-Source Resistance:
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- Qg - Gate Charge:
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14 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET SMALL SIG... |
|
4,398
In-stock
|
Buy Now Get Quote | |||
Diodes Incorporated | MOSFET MOSFET BV... |
|
4,000
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
321
In-stock
|
Buy Now Get Quote | |||
GaN Systems | MOSFET 650V, 4A, GaN... |
|
4,732
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
2,817
In-stock
|
Buy Now Get Quote | |||
Diodes Incorporated | MOSFET MOSFET BV... |
|
334
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
15,134
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
24,052
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
15,441
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
15,660
In-stock
|
Buy Now Get Quote | |||
Infineon Technologies | MOSFET MOSFET_(20V... |
|
4,632
In-stock
|
Buy Now Get Quote | |||
Diodes Incorporated | MOSFET MOSFET BV... |
|
273,652
In-stock
|
Buy Now Get Quote | |||
Diodes Incorporated | MOSFET MOSFET BV... |
|
52
In-stock
|
Buy Now Get Quote | |||
Toshiba | MOSFET LowON Res MO... |
|
52
In-stock
|
Buy Now Get Quote |