BGA855N6E6327XTSA1
- Mfr.Part #
- BGA855N6E6327XTSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TSNP-6
- Datasheet
- Download
- Description
- RF Amplifier RF MMIC SUB 3 GHZ
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- RF Amplifier
- Gain :
- 17.6 dB
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- NF - Noise Figure :
- 0.6 dB
- OIP3 - Third Order Intercept :
- 1 dBm
- Operating Frequency :
- 1.164 GHz to 1.3 GHz
- Operating Supply Current :
- 4.4 mA
- Operating Supply Voltage :
- 1.1 V to 3.3 V
- P1dB - Compression Point :
- - 14 dBm
- Package / Case :
- TSNP-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Series :
- BGA855N6
- Technology :
- SiGe
- Type :
- Low Noise Amplifiers
- Datasheets
- BGA855N6E6327XTSA1
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BGA824N6BOARDTOBO1 | Infineon Technologies | 52 | GPS Development Tools The BGA824N6 is a Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) in the range from 1550 MHz to 1615 MHz. The LNA provides 17.0 dB gain and down to 0.7 dB noise figure in the application. |
| BGA824N6E6327XTSA1 | Infineon Technologies | 22,316 | RF Amplifier RF MMIC SUB 3 GHZ |
| BGA824N6E6329XTSA1 | Infineon Technologies | 52 | RF Amplifier RF MMIC SUB 3 GHZ |
| BGA824N6SE6327XTSA1 | Infineon Technologies | 52 | RF Amplifier RF MMIC SUB 3 GHZ |
| BGA8G1BN6E6327XTSA1 | Infineon Technologies | 52 | RF Amplifier RF SILICON MMIC |
| BGA8H1BN6E6327XTSA1 | Infineon Technologies | 52 | RF Amplifier RF SILICON MMIC |
| BGA8L1BN6E6327XTSA1 | Infineon Technologies | 52 | RF Amplifier RF SILICON MMIC |
| BGA8U1BN6E6327XTSA1 | Infineon Technologies | 19,451 | RF Amplifier RF SILICON MMIC |
| BGA8V1BN6E6327XTSA1 | Infineon Technologies | 13,172 | RF Amplifier RF SILICON MMIC |
