BUL1102E
- Mfr.Part #
- BUL1102E
- Manufacturer
- STMicroelectronics
- Package/Case
- TO-220-3
- Datasheet
- Download
- Description
- Bipolar Transistors - BJT PTD IGBT & IPM
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- STMicroelectronics
- Product Category :
- Bipolar Transistors - BJT
- Collector- Emitter Voltage VCEO Max :
- 450 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 12 V
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 70 W
- Series :
- BUL1102E
- Transistor Polarity :
- NPN
- Datasheets
- BUL1102E
Manufacturer related products
-
STMicroelectronicsESD Suppressors / TVS Diodes Automotive dual-line TVS in DFN for CAN bus protection -
-
-
STMicroelectronicsESD Suppressors / TVS Diodes Dual line bidirectional ESD protection for high speed interface
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL1102EFP | STMicroelectronics | 52 | Bipolar Transistors - BJT PTD IGBT & IPM |
| BUL1203E | STMicroelectronics | 60 | Bipolar Transistors - BJT N Ch 550V 5A PWR TRANS |
| BUL128D-B | STMicroelectronics | 11,830 | Bipolar Transistors - BJT PTD IGBT & IPM |
| BUL138 | STMicroelectronics | 1,956 | Bipolar Transistors - BJT NPN Hi-Volt Fast Sw |
