- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum Operating Temperature :
- + 125 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- S-Mini-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Qualification :
- AEC-Q200
- Transistor Polarity :
- PNP
- Datasheets
- 2SA1162-Y,LXHF
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ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
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