- Manufacturer :
- Toshiba
- Product Category :
- IGBT Transistors
- Packaging :
- Tube
- Series :
- GT50JR22
- Technology :
- SI
- Datasheets
- GT50JR22(STA1,E,S)
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ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
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ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
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ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
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ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
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