IKD06N60RATMA1

Mfr.Part #
IKD06N60RATMA1
Manufacturer
Infineon Technologies
Package/Case
TO-252-3
Datasheet
Download
Description
IGBT Transistors IGBT w/ INTG DIODE 600V 12A

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Manufacturer :
Infineon Technologies
Product Category :
IGBT Transistors
Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.65 V
Configuration :
Single
Continuous Collector Current at 25 C :
12 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
100 W
Series :
Trenchstop RC
Technology :
SI
Datasheets
IKD06N60RATMA1

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