2N5115e3

Mfr.Part #
2N5115e3
Manufacturer
Microchip Technology
Package/Case
TO-18-3
Datasheet
Download
Description
JFET JFETs

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Microchip Technology
Product Category :
JFET
Configuration :
Single
Drain-Source Current at Vgs=0 :
- 15 mA to - 60 mA
Gate-Source Cutoff Voltage :
3 V to 6 V
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-18-3
Packaging :
Bulk
Pd - Power Dissipation :
500 mW
Rds On - Drain-Source Resistance :
100 Ohms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Breakdown Voltage :
30 V
Datasheets
2N5115e3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
2N5109UB Microchip Technology 52 Bipolar Transistors - BJT
2N5114 InterFET 521 JFET JFET P-Channel -40V 50mA 500mW 3mW
2N5114 Microchip Technology 52 JFET JFETs
2N5115 InterFET 92 JFET JFET P-Channel -40V 50mA 500mW 3mW
2N5115 Microchip Technology 52 JFET JFETs
2N5115UB Microchip Technology 52 JFET JFETs
2N5116 InterFET 316 JFET P-Channel 50mA
2N5116 BK PBFREE Central Semiconductor 2,148 JFET P-Ch Junc FET
2N5151 Microchip Technology 208 Bipolar Transistors - BJT Power BJT
2N5151L Microchip Technology 52 Bipolar Transistors - BJT Power BJT
2N5151U3 Microchip Technology 52 Bipolar Transistors - BJT Power BJT
2N5152 Microchip Technology 148 Bipolar Transistors - BJT Power BJT
2N5152L Microchip Technology 52 Bipolar Transistors - BJT Power BJT
2N5153U3 Microchip Technology 52 Bipolar Transistors - BJT Power BJT
2N5154 Microchip Technology 278 Bipolar Transistors - BJT Power BJT