- Manufacturer :
- Vishay
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 640 mA
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-323-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 310 mW
- Qg - Gate Charge :
- 1.4 nC
- Rds On - Drain-Source Resistance :
- 480 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
- Datasheets
- SI1302DL-T1-BE3
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SI1302DL-T1-E3 | Vishay / Siliconix | 7,716 | MOSFET 30V N-CH TRENCH |
SI1302DL-T1-GE3 | Vishay Semiconductors | 4,324 | MOSFET 30V Vds 20V Vgs SC70-3 |
SI1308EDL-T1-BE3 | Vishay / Siliconix | 13,155 | MOSFET 30V N-CHANNEL (D-S) |
SI1308EDL-T1-GE3 | Vishay Semiconductors | 144,052 | MOSFET 30V Vds 12V Vgs SC70-3 |
SI1317DL-T1-BE3 | Vishay / Siliconix | 27,888 | MOSFET 20V P-CHANNEL (D-S) |
SI1317DL-T1-GE3 | Vishay Semiconductors | 14,452 | MOSFET -20V Vds 8V Vgs SC70-3 |
SI1330EDL-T1-BE3 | Vishay / Siliconix | 9,193 | MOSFET N-CHANNEL 60-V (D-S) |
SI1330EDL-T1-E3 | Vishay Semiconductors | 28,406 | MOSFET 60V Vds 20V Vgs SC70-3 |
SI1330EDL-T1-GE3 | Vishay Semiconductors | 3,940 | MOSFET 60V Vds 20V Vgs SC70-3 |