IRFR1N60APBF-BE3

Mfr.Part #
IRFR1N60APBF-BE3
Manufacturer
Vishay / Siliconix
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET 600V N-CH HEXFET D-PAK

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Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
1.4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Tube
Pd - Power Dissipation :
36 W
Qg - Gate Charge :
14 nC
Rds On - Drain-Source Resistance :
7 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
4 V
Datasheets
IRFR1N60APBF-BE3

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