ISZ0804NLSATMA1

Mfr.Part #
ISZ0804NLSATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET TRENCH >=100V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
58 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
60 W
Qg - Gate Charge :
9.2 nC
Rds On - Drain-Source Resistance :
11.5 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.3 V
Datasheets
ISZ0804NLSATMA1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
ISZ019N03L5SATMA1 Infineon Technologies 4,121 MOSFET TRENCH <= 40V
ISZ034N06LM5ATMA1 Infineon Technologies 54 MOSFET TRENCH 40<-<100V
ISZ040N03L5ISATMA1 Infineon Technologies 187 MOSFET TRENCH <= 40V
ISZ0501NLSATMA1 Infineon Technologies 6,916 MOSFET TRENCH <= 40V
ISZ0602NLSATMA1 Infineon Technologies 1,636 MOSFET TRENCH 40<-<100V
ISZ065N03L5SATMA1 Infineon Technologies 100 MOSFET TRENCH <= 40V
ISZ0702NLSATMA1 Infineon Technologies 427 MOSFET TRENCH 40<-<100V
ISZ0703NLSATMA1 Infineon Technologies 8,214 MOSFET TRENCH 40<-<100V
ISZ0803NLSATMA1 Infineon Technologies 1,579 MOSFET TRENCH >=100V
ISZ0901NLSATMA1 Infineon Technologies 8,147 MOSFET TRENCH <= 40V