SUP70030E-GE3
- Mfr.Part #
- SUP70030E-GE3
- Manufacturer
- Vishay Semiconductors
- Package/Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET 100V Vds; 20V Vgs TO-220AB
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- Manufacturer :
- Vishay Semiconductors
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 150 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 375 W
- Qg - Gate Charge :
- 214 nC
- Rds On - Drain-Source Resistance :
- 3.18 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
- Datasheets
- SUP70030E-GE3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SUP70040E-GE3 | Vishay Semiconductors | 2,644 | MOSFET 100V Vds 20V Vgs TO-220 |
SUP70060E-GE3 | Vishay / Siliconix | 1,260 | MOSFET 100V Vds 20V Vgs TO-220 |
SUP70090E-GE3 | Vishay / Siliconix | 4,852 | MOSFET 100V Vds 20V Vgs TO-220 |
SUP70101EL-GE3 | Vishay Semiconductors | 17,320 | MOSFET -100V Vds 20V Vgs TO-220AB |