RV4E031RPHZGTCR1

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

3.1 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

-

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

1.5 W

Qg - Gate Charge :

4.8 nC

Qualification :

AEC-Q101

Rds On - Drain-Source Resistance :

105 mOhms

Technology :

SI

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V