SCT3030ALHRC11

Mfr.Part #
SCT3030ALHRC11
Manufacturer
ROHM Semiconductor
Package/Case
TO-247-3
Datasheet
Download
Description
MOSFET 650V 70A 262W SIC 30mOhm TO-247N

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Manufacturer :
ROHM Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
70 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
262 W
Qg - Gate Charge :
104 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
30 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage :
2.7 V
Datasheets
SCT3030ALHRC11

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