SCT20N120

Manufacturer :

STMicroelectronics

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

20 A

Maximum Operating Temperature :

+ 200 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

HiP-247-3

Packaging :

Tube

Pd - Power Dissipation :

175 W

Qg - Gate Charge :

45 nC

Rds On - Drain-Source Resistance :

239 mOhms

Technology :

SiC

Tradename :

HiP247

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.2 kV

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

3.5 V