SIHD14N60E-GE3

Mfr.Part #
SIHD14N60E-GE3
Manufacturer
Vishay / Siliconix
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET 600V Vds 30V Vgs DPAK (TO-252)

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Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
13 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
147 W
Qg - Gate Charge :
32 nC
Rds On - Drain-Source Resistance :
269 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
4 V
Datasheets
SIHD14N60E-GE3

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