TK65S04N1L,LXHQ

Manufacturer :

Toshiba

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

65 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

-

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

DPAK-3

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

107 W

Qg - Gate Charge :

39 nC

Qualification :

AEC-Q101

Rds On - Drain-Source Resistance :

4.3 mOhms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

40 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V