SCTW35N65G2VAG
- Mfr.Part #
- SCTW35N65G2VAG
- Manufacturer
- STMicroelectronics
- Package/Case
- HiP-247-3
- Datasheet
- Download
- Description
- MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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- Manufacturer :
- STMicroelectronics
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 45 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- HiP-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 240 W
- Qg - Gate Charge :
- 73 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 67 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
- Datasheets
- SCTW35N65G2VAG
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