SIS407DN-T1-GE3

Mfr.Part #
SIS407DN-T1-GE3
Manufacturer
Vishay Semiconductors
Package/Case
PowerPAK-1212-8
Datasheet
Download
Description
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
25 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-1212-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
33 W
Qg - Gate Charge :
38 nC
Rds On - Drain-Source Resistance :
9.5 mOhms
Technology :
SI
Tradename :
TrenchFET, PowerPAK
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage :
400 mV
Datasheets
SIS407DN-T1-GE3

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