SI2306BDS-T1-GE3

Mfr.Part #
SI2306BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Package/Case
SOT-23-3
Datasheet
Download
Description
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

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Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
3.16 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
750 mW
Qg - Gate Charge :
3 NC
Rds On - Drain-Source Resistance :
47 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3 V
Datasheets
SI2306BDS-T1-GE3

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