SI2306BDS-T1-GE3
- Mfr.Part #
- SI2306BDS-T1-GE3
- Manufacturer
- Vishay / Siliconix
- Package/Case
- SOT-23-3
- Datasheet
- Download
- Description
- MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
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- Manufacturer :
- Vishay / Siliconix
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.16 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 750 mW
- Qg - Gate Charge :
- 3 NC
- Rds On - Drain-Source Resistance :
- 47 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
- Datasheets
- SI2306BDS-T1-GE3
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