SQ1440EH-T1_GE3

Mfr.Part #
SQ1440EH-T1_GE3
Manufacturer
Vishay Semiconductors
Package/Case
SOT-363-6
Datasheet
Download
Description
MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualified

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
1.7 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SOT-363-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
3.3 W
Qg - Gate Charge :
5.5 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
85 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1.5 V
Datasheets
SQ1440EH-T1_GE3

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
SQ1421EDH-T1_GE3 Vishay Semiconductors 7,985 MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
SQ1431EH-T1_GE3 Vishay / Siliconix 6,169 MOSFET 30V 3A 3W AEC-Q101 Qualified
SQ1464EEH-T1_GE3 Vishay / Siliconix 4,713 MOSFET 60V Vds; +/-8V Vgs SOT-363/SC-70
SQ1470AEH-T1_GE3 Vishay Semiconductors 8,052 MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified