IPS80R600P7AKMA1
- Mfr.Part #
- IPS80R600P7AKMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- IPAK-3
- Datasheet
- Download
- Description
- MOSFET LOW POWER_NEW
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- IPAK-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 60 W
- Qg - Gate Charge :
- 20 nC
- Rds On - Drain-Source Resistance :
- 510 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 800 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
- Datasheets
- IPS80R600P7AKMA1
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
IPS80R1K2P7AKMA1 | Infineon Technologies | 52 | MOSFET LOW POWER_NEW |
IPS80R1K4P7AKMA1 | Infineon Technologies | 750 | MOSFET LOW POWER_NEW |
IPS80R2K0P7AKMA1 | Infineon Technologies | 451 | MOSFET LOW POWER_NEW |
IPS80R2K4P7AKMA1 | Infineon Technologies | 52 | MOSFET LOW POWER_NEW |
IPS80R750P7AKMA1 | Infineon Technologies | 2,523 | MOSFET LOW POWER_NEW |
IPS80R900P7AKMA1 | Infineon Technologies | 2,430 | MOSFET LOW POWER_NEW |