TSM80N1R2CI C0G

Mfr.Part #
TSM80N1R2CI C0G
Manufacturer
Taiwan Semiconductor
Package/Case
TO-220-3
Datasheet
Download
Description
MOSFET 800V 5.5A Single N-C hannel Power MOSFET

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Manufacturer :
Taiwan Semiconductor
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
5.5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220-3
Packaging :
Tube
Pd - Power Dissipation :
25 W
Qg - Gate Charge :
19.4 nC
Rds On - Drain-Source Resistance :
900 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
800 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
TSM80N1R2CI C0G

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