IPB020N10N5LFATMA1

Mfr.Part #
IPB020N10N5LFATMA1
Manufacturer
Infineon Technologies
Package/Case
D2PAK-3
Datasheet
Download
Description
MOSFET DIFFERENTIATED MOSFETS

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Manufacturer :
Infineon Technologies
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
120 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
D2PAK-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
375 W
Qg - Gate Charge :
210 nC
Rds On - Drain-Source Resistance :
1.7 mOhms
Technology :
SI
Tradename :
OptiMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.2 V
Datasheets
IPB020N10N5LFATMA1

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