SUD08P06-155L-BE3

Mfr.Part #
SUD08P06-155L-BE3
Manufacturer
Vishay / Siliconix
Package/Case
TO-252-3
Datasheet
Download
Description
MOSFET P-CHANNEL 60V (D-S)

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
8.2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
20.8 W
Qg - Gate Charge :
19 nC
Rds On - Drain-Source Resistance :
155 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
SUD08P06-155L-BE3

Manufacturer related products

  • Vishay / Siliconix
    Power Management IC Development Tools Evaluation Board For SIC464ED
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32429 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Reference Board for SIP403 series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32408 Series
  • Vishay / Siliconix
    Power Management IC Development Tools Development Board For SiP32430 Series

Catalog related products

Related products

Part Manufacturer Stock Description
SUD08P06-155L-GE3 Vishay Semiconductors 193 MOSFET -30V 0.155ohm@-10V -8.4A P-CH
SUD09P10-195-BE3 Vishay / Siliconix 34,641 MOSFET 100V P-CH MOSFET (D-S)
SUD09P10-195-GE3 Vishay Semiconductors 38,452 MOSFET -100V 195mOhms@ 10V -8.8A