NVBG160N120SC1

Mfr.Part #
NVBG160N120SC1
Manufacturer
onsemi
Package/Case
-
Datasheet
Download
Description
MOSFET SIC MOS D2PAK-7L 160MOHM 1200V

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
onsemi
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
19.5 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
136 W
Qg - Gate Charge :
33.8 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
224 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
4.3 V
Datasheets
NVBG160N120SC1

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
NVBG015N065SC1 onsemi 52 MOSFET SIC MOS D2PAK-7L 650V
NVBG020N090SC1 ON 84 New original
NVBG020N120SC1 onsemi 2,180 MOSFET SIC MOS D2PAK-7L 20MOHM 1
NVBG040N120SC1 onsemi 1,350 MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
NVBG045N065SC1 onsemi 52 MOSFET SIC MOS D2PAK-7L 650V
NVBG060N090SC1 onsemi 2,612 MOSFET 60MOHM
NVBGS1D2N08H onsemi 52 MOSFET T8-80V IN SUZHOU D2PAK7L FOR AUTOMOTIVE MARKET
NVBGS4D1N15MC onsemi 473 MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR AUTOMOTIVE
NVBGS6D5N15MC onsemi 7,732 MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR AUTOMOTIVE