IPG20N10S4L35ATMA1

Manufacturer :

Infineon Technologies

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

20 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

TDSON-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

43 W

Qg - Gate Charge :

17.4 nC

Qualification :

AEC-Q101

Rds On - Drain-Source Resistance :

29 mOhms, 29 mOhms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

1.1 V