SIZF906BDT-T1-GE3

Mfr.Part #
SIZF906BDT-T1-GE3
Manufacturer
Vishay / Siliconix
Package/Case
PowerPAIR-6x5F-8
Datasheet
Download
Description
MOSFET DUAL N-CH 30-V (D-S) W/SCHOTT

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Manufacturer :
Vishay / Siliconix
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
105 A, 257 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAIR-6x5F-8
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
38 W, 83 W
Qg - Gate Charge :
25 nC, 81 nC
Rds On - Drain-Source Resistance :
680 uOhms, 2.1 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 16 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.2 V
Datasheets
SIZF906BDT-T1-GE3

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