- Manufacturer :
- Toshiba
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 27.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- DFN-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 240 W
- Qg - Gate Charge :
- 75 nC
- Rds On - Drain-Source Resistance :
- 120 mOhms
- Technology :
- SI
- Tradename :
- DTMOSIV
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
- Datasheets
- TK28V65W,LQ
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
TK28A65W,S5X | Toshiba | 372 | MOSFET Power MOSFET N-Channel |
TK28E65W,S1X | Toshiba | 147 | MOSFET PWR MOS PD=230W F=1MHZ |
TK28N65W,S1F | Toshiba | 52 | MOSFET Power MOSFET N-Channel |
TK28N65W5,S1F | Toshiba | 148 | MOSFET TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS |
TK28V65W5,LQ | Toshiba | 8,004 | MOSFET PWR MOS PD=240W F=1MHZ |