PMXB120EPEZ

Mfr.Part #
PMXB120EPEZ
Manufacturer
Nexperia
Package/Case
DFN-1010-3
Datasheet
Download
Description
MOSFET 30 V, P-channel Trench MOSFET

Request A Quote(RFQ)

* Contact Name:
* Company:
* E-Mail:
* Phone:
* Comment:
* Captcha:
loading...
Manufacturer :
Nexperia
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
2.4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
DFN-1010-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
8.33 W
Qg - Gate Charge :
11 nC
Rds On - Drain-Source Resistance :
100 mOhms
Technology :
SI
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V
Datasheets
PMXB120EPEZ

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
PMXB350UPEZ Nexperia 14,646 MOSFET 20 V, P-channel Trench MOSFET
PMXB360ENEAZ Nexperia 26,961 MOSFET 80 V, N-channel Trench MOSFET
PMXB40UNEZ Nexperia 35,051 MOSFET 12 V, N-channel Trench MOSFET
PMXB43UNEZ Nexperia 17,784 MOSFET 20 V, N-channel Trench MOSFET
PMXB56ENZ Nexperia 52 MOSFET 30 V, N-channel Trench MOSFET
PMXB65ENEZ Nexperia 212 MOSFET 31 V, N-channel Trench MOSFET
PMXB65UPEZ Nexperia 15,644 MOSFET 12V P-channel Trench MOSFET
PMXB75UPEZ Nexperia 7,937 MOSFET 20 V, P-channel Trench MOSFET