SCTWA35N65G2V-4
- Mfr.Part #
- SCTWA35N65G2V-4
- Manufacturer
- STMicroelectronics
- Package/Case
- HiP247-4
- Datasheet
- Download
- Description
- MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
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- Manufacturer :
- STMicroelectronics
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 45 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- HiP247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 240 W
- Qg - Gate Charge :
- 73 nC
- Rds On - Drain-Source Resistance :
- 67 mOhms
- Technology :
- SI
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
- Datasheets
- SCTWA35N65G2V-4
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