SCT10N120H

Manufacturer :

STMicroelectronics

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

12 A

Maximum Operating Temperature :

+ 200 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

H2PAK-2

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

150 W

Qg - Gate Charge :

22 nC

Rds On - Drain-Source Resistance :

690 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.2 kV

Vgs - Gate-Source Voltage :

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :

1.8 V