SCTH60N120G2-7
- Mfr.Part #
- SCTH60N120G2-7
- Manufacturer
- STMicroelectronics
- Package/Case
- H2PAK-7
- Datasheet
- Download
- Description
- MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
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- Manufacturer :
- STMicroelectronics
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 60 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- H2PAK-7
- Packaging :
- Reel
- Pd - Power Dissipation :
- 390 W
- Qg - Gate Charge :
- 94 nC
- Rds On - Drain-Source Resistance :
- 52 mOhms
- Technology :
- SiC
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
- Datasheets
- SCTH60N120G2-7
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