SCT2280KEHRC11

Manufacturer :

ROHM Semiconductor

Product Category :

MOSFET

Channel Mode :

Enhancement

Id - Continuous Drain Current :

14 A

Maximum Operating Temperature :

+ 175 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-247N-3

Packaging :

Tube

Pd - Power Dissipation :

108 W

Qg - Gate Charge :

36 nC

Rds On - Drain-Source Resistance :

364 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.2 kV

Vgs - Gate-Source Voltage :

- 6 V to 22 V

Vgs th - Gate-Source Threshold Voltage :

4 V