GS66506T-TR
- Mfr.Part #
- GS66506T-TR
- Manufacturer
- GaN Systems
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Request A Quote(RFQ)
- * Contact Name:
- * Company:
- * E-Mail:
- * Phone:
- * Comment:
- * Captcha:
-
- Manufacturer :
- GaN Systems
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 22.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Packaging :
- Reel
- Qg - Gate Charge :
- 4.5 nC
- Rds On - Drain-Source Resistance :
- 90 mOhms
- Technology :
- GaN
- Tradename :
- GaNPX
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.6 V
- Datasheets
- GS66506T-TR
Manufacturer related products
-
GaN SystemsPower Management IC Development Tools 650 V 60A GaN Half-Bridge and Driver with Over Current Protection -
GaN SystemsPower Management IC Development Tools 100V, 7 mOhm, GaN High Power Half Bridge Evaluation Board
-
GaN SystemsPower Management IC Development Tools 300W, 6.78MHz Class EF2 Power Amplifier for Wireless Power Transfer
-
GaN SystemsPower Management IC Development Tools 50W, 6.78MHz Class EF2 Power Amplifier for Wireless Power Transfer
-
GaN SystemsPower Management IC Development Tools 100W, 6.78MHz Class EF2 Power Amplifier for Wireless Power Transfer
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GS66502B-MR | GaN Systems | 17,107 | MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66502B-TR | GaN Systems | 52 | MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66504B-MR | GaN Systems | 356 | MOSFET 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66504B-TR | GaN Systems | 52 | MOSFET 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66506T-MR | GaN Systems | 921 | MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled |
| GS66508B-EVBDB1 | GaN Systems | 176 | Power Management IC Development Tools GS66508B Half Bridge Daughter Board |
| GS66508B-MR | GaN Systems | 2,560 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooling |
| GS66508B-TR | GaN Systems | 52 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooling |
| GS66508T-EVBDB2 | GaN Systems | 166 | Power Management IC Development Tools GS66508T Half Bridge Daughter Board |
| GS66508T-MR | GaN Systems | 8,371 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66508T-TR | GaN Systems | 52 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516B-MR | GaN Systems | 6,296 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516B-TR | GaN Systems | 52 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516T-EVBDB2 | GaN Systems | 160 | Power Management IC Development Tools GS66516T Half Bridge Daughter Board |
| GS66516T-MR | GaN Systems | 17,830 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
