SI7726DN-T1-GE3

Mfr.Part #
SI7726DN-T1-GE3
Manufacturer
Vishay Semiconductors
Package/Case
PowerPAK-1212-8
Datasheet
Download
Description
MOSFET 30V 35A 52W 9.5mohm @ 10V

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Manufacturer :
Vishay Semiconductors
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
35 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 50 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-1212-8
Packaging :
Reel
Pd - Power Dissipation :
52 W
Qg - Gate Charge :
43 nC
Rds On - Drain-Source Resistance :
9.5 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1.4 V
Datasheets
SI7726DN-T1-GE3

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