DMT10H015LFG-13

Mfr.Part #
DMT10H015LFG-13
Manufacturer
Diodes Incorporated
Package/Case
PowerDI3333-8
Datasheet
Download
Description
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W

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Manufacturer :
Diodes Incorporated
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
42 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerDI3333-8
Packaging :
Reel
Pd - Power Dissipation :
2 W
Qg - Gate Charge :
33.3 nC
Rds On - Drain-Source Resistance :
13.5 mOhms
Technology :
SI
Tradename :
PowerDI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V
Datasheets
DMT10H015LFG-13

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