STI33N60M2
- Mfr.Part #
- STI33N60M2
- Manufacturer
- STMicroelectronics
- Package/Case
- TO-262-3
- Datasheet
- Download
- Description
- MOSFET PTD HIGH VOLTAGE
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- Manufacturer :
- STMicroelectronics
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 26 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-262-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 190 W
- Qg - Gate Charge :
- 45.5 nC
- Rds On - Drain-Source Resistance :
- 125 mOhms
- Technology :
- SI
- Tradename :
- MDmesh
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
- Datasheets
- STI33N60M2
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