STI33N60M2

Mfr.Part #
STI33N60M2
Manufacturer
STMicroelectronics
Package/Case
TO-262-3
Datasheet
Download
Description
MOSFET PTD HIGH VOLTAGE

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Manufacturer :
STMicroelectronics
Product Category :
MOSFET
Channel Mode :
Enhancement
Id - Continuous Drain Current :
26 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-262-3
Packaging :
Tube
Pd - Power Dissipation :
190 W
Qg - Gate Charge :
45.5 nC
Rds On - Drain-Source Resistance :
125 mOhms
Technology :
SI
Tradename :
MDmesh
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
3 V
Datasheets
STI33N60M2

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